2SC5226A no. a1062-1/8 features ? low-noise : nf=1.0db typ (f=1ghz) ? high gain : ? s21e ? 2 =12db typ (f=1ghz) ? high cut-off frequency : f t =7ghz typ speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit collector-to-base voltage v cbo 20 v collector-to-emitter voltage v ceo 10 v emitter-to-base voltage v ebo 2v collector current i c 70 ma collector dissipation p c 150 mw junction temperature tj 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) 7023a-009 ordering number : ena1062a 71812 tkim/51408ab tiim tc-00001340 sanyo semiconductors data sheet 2SC5226A npn epitaxial planar silicon transistor vhf to uhf wide-band low-noise ampli er applications http:// semicon.sanyo.com/en/network product & package information ? package : mcp ? jeita, jedec : sc-70, sot-323 ? minimum packing quantity : 3,000 pcs./reel packing type: tl marking electrical connection ln lot no. lot no. r a n k tl 1 : base 2 : emitter 3 : collector sanyo : mcp 3 12 2.0 0.425 0.425 0.3 0.65 2.1 0.9 1.25 0.3 0.2 0 to 0.08 0.15 2SC5226A-4-tl-e 2SC5226A-5-tl-e 3 2 1
2SC5226A no. a1062-2/8 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max collector cutoff current i cbo v cb =10v, i e =0a 1.0 a emitter cutoff current i ebo v eb =1v, i c =0a 10 a dc current gain h fe v ce =5v, i c =20ma 60* 270* gain-bandwidth product f t v ce =5v, i c =20ma 5 7 ghz output capacitance cob v cb =10v, f=1mhz 0.75 1.2 pf reverse transfer capacitance cre 0.5 pf forward transfer gain ? s21e ? 2 1v ce =5v, i c =20ma, f=1ghz 9 12 db ? s21e ? 2 2v ce =2v, i c =3ma, f=1ghz 8 db noise figure nf v ce =5v, i c =7ma, f=1ghz 1.0 1.8 db * : the 2SC5226A is classi ed by 20ma hfe as follows : rank 3 4 5 h fe 60 to 120 90 to 180 135 to 270 ordering information device package shipping memo 2SC5226A-4-tl-e mcp 3,000pcs./reel pb free 2SC5226A-5-tl-e mcp 3,000pcs./reel h fe -- i c collector current, i c -- ma dc current gain, h fe cre -- v cb collector-to-base voltage, v cb -- v reverse transfer capacitance, cre -- pf collector current, i c -- m a gain-bandwidth product, f t -- ghz f t -- i c cob -- v cb collector-to-base voltage, v cb -- v output capacitance, cre -- pf itr07921 f=1mhz itr07922 f=1mhz itr07919 35 3 2 1.0 7 35 2 0.1 7 72 10 35 3 2 1.0 7 35 2 0.1 7 72 10 1.0 0.1 2 3 5 7 5 7 2 3 1.0 0.1 2 3 5 7 5 7 2 3 itr07920 23 3 57 7 10 1.0 7 100 5 22 7 10 1.0 5 7 5 2 3 2 v ce =5v 100 10 3 5 3 2 1.0 7 3 5 722 10 5 7 100 2 3 5 7 5 7 2 3 v ce =5v
2SC5226A no. a1062-3/8 ? s21e ? 2 -- i c collector current, i c -- ma forward transfer gain, ? s21e ? 2 -- db collector dissipation, p c -- mw p c -- ta ambient temperature, ta -- c collector current, i c -- ma noise figure, nf -- db nf -- i c 35 3 2 1.0 7 35 722 10 5 7 100 0 2 4 6 8 10 12 v ce =5v f=1ghz itr07923 0 14 12 10 8 6 4 2 357 1.0 23 57 10 100 22 357 f=1ghz itr07924 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 150 itr07925 v ce =5v v ce =2v
2SC5226A no. a1062-4/8 f=100mhz, 200mhz to 2000mhz(200mhz step) f=100mhz, 200mhz to 2000mhz(200mhz step) f=100mhz, 200mhz to 2000mhz(200mhz step) f=100mhz, 200mhz to 2000mhz(200mhz step) j50 j25 j10 0 10 --j10 --j25 --j50 --j100 --j150 --j200 --j250 j100 j150 j200 j250 100 150 250 v ce =2v i c =3ma 90 120 150 180 --150 --120 --90 --30 --60 0 60 30 16 20 12 8 4 0.1ghz 0.1ghz 2.0ghz v ce =5v i c =20ma 90 120 150 180 --150 --120 --90 --30 --60 0 60 30 0.04 0.08 0.16 0.12 0.1ghz j50 j25 j10 0 10 25 --j10 --j25 --j50 --j100 --j150 --j200 --j250 j100 j150 j200 j250 100 150 250 2.0ghz 50 v ce =5v i c =7ma itr07926 itr07927 itr07928 itr07929 0.1ghz 25 0.1ghz 2.0ghz 2.0ghz v ce =5v i c =7ma 0.1ghz 2.0ghz 2.0ghz 2.0ghz 2.0ghz 2.0ghz v ce =5v i c =20ma v ce =5v i c =7ma 0.1ghz 0.1ghz v ce =5v i c =20ma 2.0ghz 2.0ghz 50 2.0ghz v ce =5v i c =20ma v ce =5v i c =7ma 0.1ghz 0.2 v ce =2v i c =3ma v ce =2v i c =3ma v ce =2v i c =3ma
2SC5226A no. a1062-5/8 s parameters (common emitter) v ce =5v, i c =7ma, z o =50 freq(mhz) ? s11 ? s11 ? s21 ? s21 ? s12 ? s12 ? s22 ? s22 100 0.720 -46.0 17.973 148.5 0.030 68.5 0.880 -23.6 200 0.612 -80.9 13.927 127.3 0.047 57.1 0.697 -37.6 400 0.497 -121.3 8.656 105.0 0.066 51.3 0.479 -47.6 600 0.456 -143.5 6.080 92.8 0.079 52.9 0.382 -50.5 800 0.440 -157.6 4.725 84.3 0.094 55.4 0.339 -51.8 1000 0.436 -167.5 3.864 77.0 0.110 56.8 0.323 -53.4 1200 0.434 -176.1 3.258 70.3 0.126 57.9 0.312 -55.8 1400 0.433 176.6 2.847 64.5 0.143 58.4 0.304 -58.3 1600 0.433 170.9 2.329 57.4 0.160 58.9 0.296 -62.0 1800 0.434 165.0 2.252 54.2 0.178 58.6 0.293 -65.0 2000 0.439 159.6 2.057 49.2 0.197 58.1 0.294 -68.1 v ce =5v, i c =20ma, z o =50 freq(mhz) ? s11 ? s11 ? s21 ? s21 ? s12 ? s12 ? s22 ? s22 100 0.481 -78.8 29.795 132.9 0.022 63.9 0.707 -38.2 200 0.420 -119.2 19.008 112.2 0.033 60.8 0.470 -51.1 400 0.391 -151.6 10.416 95.4 0.052 64.7 0.296 -55.3 600 0.386 -166.4 7.084 86.6 0.071 67.2 0.236 -56.1 800 0.381 -175.9 5.407 80.1 0.092 68.4 0.213 -56.6 1000 0.382 178.2 4.401 74.1 0.114 67.8 0.208 -57.9 1200 0.385 172.1 3.701 68.5 0.134 66.8 0.204 -60.7 1400 0.388 166.7 3.217 63.6 0.156 65.6 0.202 -63.5 1600 0.390 162.1 2.839 58.8 0.176 64.0 0.199 -67.9 1800 0.391 156.7 2.534 54.3 0.197 62.4 0.197 -71.2 2000 0.394 152.1 2.319 50.1 0.219 60.6 0.197 -74.2 v ce =2v, i c =3ma, z o =50 freq(mhz) ? s11 ? s11 ? s21 ? s21 ? s12 ? s12 ? s22 ? s22 100 0.858 -32.4 9.413 157.2 0.040 72.6 0.945 -16.5 200 0.782 -60.7 8.187 138.5 0.070 59.2 0.833 -29.3 400 0.653 -101.1 5.855 113.8 0.101 44.5 0.637 -43.2 600 0.588 -126.5 4.337 98.4 0.114 39.1 0.515 -50.0 800 0.557 -143.7 3.444 87.7 0.122 38.0 0.454 -53.8 1000 0.543 -156.3 2.871 78.5 0.130 38.6 0.426 -57.1 1200 0.536 -166.8 2.446 70.5 0.137 40.3 0.407 -60.3 1400 0.533 -175.5 2.145 63.5 0.146 42.5 0.393 -63.8 1600 0.527 177.0 1.904 57.1 0.155 45.0 0.382 -68.0 1800 0.525 170.3 1.714 51.7 0.168 47.3 0.379 -72.0 2000 0.528 163.8 1.564 45.9 0.183 49.2 0.378 -75.8
2SC5226A no. a1062-6/8 embossed taping speci cation 2SC5226A-4-tl-e, 2SC5226A-5-tl-e
2SC5226A no. a1062-7/8 outline drawing land pattern example 2SC5226A-4-tl-e, 2SC5226A-5-tl-e mass (g) unit 0.006 * for reference mm unit: mm 0.65 0.65 2.1 0.7 1.0
2SC5226A ps no. a1062-8/8 this catalog provides information as of july, 2012. speci cations and information herein are subject to change without notice. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. regarding monolithic semiconductors, if you should intend to use this ic continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. please contact us for a confirmation. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
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